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| Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. * Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 19.7 dB Drain Efficiency -- 28.4% ACPR @ 750 kHz Offset -- - 46.8 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S9150HR3 MRF5S9150HSR3 880 MHz, 33 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S9150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S9150HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +15 - 65 to +150 150 200 Unit Vdc Vdc C C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 150 W CW Case Temperature 76C, 33 W CW Symbol RJC Value (1) 0.34 0.34 Unit C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S9150HR3 MRF5S9150HSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 600 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.15 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 3.1 91.5 -- -- pF pF VGS(th) VGS(Q) VDS(on) 2 3 0.1 3 4 0.2 4 5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 500 Adc Adc nAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. Gps D ACPR IRL 18.5 26.5 -- -- 19.7 28.4 - 46.8 - 20 21.5 -- - 45 -9 dB % dBc dB MRF5S9150HR3 MRF5S9150HSR3 2 RF Device Data Freescale Semiconductor VBIAS + C14 B1 VSUPPLY R2 R1 C16 C17 L1 Z9 C8 C10 Z10 Z11 Z12 Z13 Z14 Z15 Z16 C2 C7 C3 C4 C5 DUT C9 L3 C11 C12 C13 Z17 C18 C19 L2 RF OUTPUT C20 C21 + C22 C15 RF INPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 C6 Z8 VSUPPLY + C23 C24 C25 C26 C27 Z1 Z2 Z3, Z17 Z4 Z5 Z6 Z7 Z8 Z9 0.416 x 0.080 Microstrip 0.851 x 0.080 Microstrip 0.410 x 0.080 Microstrip 0.055 x 0.220 Microstrip 0.434 x 0.220 Microstrip 0.200 x 0.220 x 0.630 Taper 0.077 x 0.630 Microstrip 0.221 x 0.630 Microstrip 0.193 x 0.630 Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.105 x 0.630 Microstrip 0.200 x 0.630 x 0.220 Taper 0.236 x 0.220 Microstrip 0.195 x 0.220 Microstrip 0.059 x 0.220 Microstrip 0.989 x 0.080 Microstrip 0.284 x 0.080 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.55 Figure 1. MRF5S9150HR3(HSR3) Test Circuit Schematic Table 5. MRF5S9150HR3(HSR3) Test Circuit Component Designations and Values Part B1 C1, C2, C17 C3, C12 C4 C5, C6 C7, C8 C9, C10 C11 C13 C14 C15 C16 C18, C23 C19, C20, C21, C24, C25, C26 C22, C27 L1, L2, L3 R1 R2 Description Small Ferrite Bead 47 pF Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 13 pF Chip Capacitor 15 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 8.2 pF Chip Capacitor 0.6- 4.5 pF Variable Capacitor, Gigatrim 22 pF Chip Capacitor 1 F, 50 V Tantalum Capacitor 20K pF Chip Capacitor 180 pF Chip Capacitors 10 F, 50 V Chip Capacitors (2220) 470 F, 63 V Electrolytic Capacitors 12.5 nH Inductors 180 k, 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number 2743019447 100B470JP500X 27291SL 100B130JP500X 100B150JP500X 100B120JP500X 100B4R3JP500X 100B8R2JP500X 27271SL 100B220JP500X T491C105K0J0AS CDR353P203AK0S 100B181JP500X GRM55DR61H106KA88B KME63VB471M12x25LL A04T Manufacturer Fair Rite ATC Johanson ATC ATC ATC ATC ATC Johanson ATC Kemit Kemit ATC Murata United Chemi - Con Coilcraft MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 3 C14 900 MHz Rev. 3 C16 C15 R2 R1 C17 C5 L1 C1 CUT OUT AREA C3 C7 C9 L2 L3 C11 C12 C8 C10 C23 C18 C19 C22 B1 C20 C21 C4 C6 C13 C2 C24 C25 C26 C27 Figure 2. MRF5S9150HR3(HSR3) Test Circuit Component Layout MRF5S9150HR3 MRF5S9150HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 19.6 19.2 Gps, POWER GAIN (dB) 18.8 18.4 18 17.6 17.2 16.8 16.4 16 840 850 860 ALT1 ACPR Gps D 30 28 26 24 -40 -45 -50 -55 -60 -3 ACPR (dBc), ALT1 (dBc) -8 -13 -18 -23 -28 IRL 870 880 890 900 910 -65 920 f, FREQUENCY (MHz) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 33 Watts Avg. D, DRAIN EFFICIENCY (%) -3 ACPR (dBc), ALT1 (dBc) -8 -13 -18 -23 -28 2250 mA IDQ = 750 mA -40 -50 1875 mA -60 1125 mA -70 1 10 100 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 1500 mA 19.5 19 18.5 Gps, POWER GAIN (dB) 18 17.5 17 16.5 16 15.5 15 14.5 840 850 860 870 880 890 900 910 f, FREQUENCY (MHz) ALT1 ACPR IRL VDD = 28 Vdc, Pout = 66 W (Avg.) IDQ = 1500 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) D Gps 43 41 39 37 35 -35 -40 -45 -50 -55 -60 920 Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 66 Watts Avg. 22 21 Gps, POWER GAIN (dB) 20 19 1125 mA 18 17 16 750 mA VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements IDQ = 2250 mA 1875 mA 1500 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -10 -20 -30 VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 33 W (Avg.) IDQ = 1500 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) D, DRAIN EFFICIENCY (%) 20 32 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 VDD = 28 Vdc, IDQ = 1500 mA f1 = 880 MHz, f2 = 880.1 MHz Two-Tone Measurements IMD, INTERMODULATION DISTORTION (dBc) -10 0 -10 -20 -30 3rd Order -40 -50 -60 0.1 1 10 100 TWO-TONE SPACING (MHz) 5th Order 7th Order VDD = 28 Vdc, Pout = 150 W (PEP) IDQ = 1500 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 3rd Order -50 -60 5th Order -70 -80 7th Order -90 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 61 P6dB = 54.52 dBm (283.14 W) 59 Pout, OUTPUT POWER (dBm) 57 55 53 51 49 47 45 25 27 29 31 P3dB = 53.84 dBm (242.1 W) P1dB = 52.87 dBm (193.64 W) Ideal Actual VDD = 28 Vdc, IDQ = 1500 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz 33 35 37 39 41 Pin, INPUT POWER (dBm) Figure 9. Pulse CW Output Power versus Input Power D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 50 40 85_C 30 20 ALT1 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 Gps ACPR D VDD = 28 Vdc, IDQ = 1500 mA f = 880 MHz, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) -30_C 85_C 25_C -30_C 25_C -40 -50 TC = -30_C 85_C 25_C -60 -70 -80 300 -20 -30 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF5S9150HR3 MRF5S9150HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 23 22 TC = -30_C Gps, POWER GAIN (dB) 21 20 19 18 17 16 0.1 1 10 VDD = 28 Vdc IDQ = 1500 mA f = 880 MHz D 25_C 85_C Gps -30_C 70 60 85_C 50 40 30 20 10 0 100 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power 21 IDQ = 1500 mA f = 880 MHz 20 Gps, POWER GAIN (dB) 19 18 17 16 V VDD = 12 V 0 50 100 20 V 24 V 28 V 32 V 16 150 200 250 300 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power 1010 MTTF FACTOR (HOURS X AMPS2) 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 7 D, DRAIN EFFICIENCY (%) N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 1.2288 MHz Channel BW . ... .... . .. ........................ .... ............ ................. . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . ... ............. ........... .... ........ ........ . .... . ......... ... . ... .. ... . ........ . ..... . ........ . ... . .. ......... ...... ....... ..... ....... ..... ... ..... .... .... . ..... ... ........ . .... ......... . .. .... . ...... .... ....... .. .. ........ -ACPR in 30 kHz .. +ACPR in 30 kHz ............ ..... ........... ..... .. ... ............... ... ......... .. ... ...... Integrated BW Integrated BW .. ........ ..... ... . ..... ............ .. ......... ..... Figure 14. Single - Carrier CCDF N - CDMA -110 -3.6 -2.9 -2.2 -1.5 -0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF5S9150HR3 MRF5S9150HSR3 8 RF Device Data Freescale Semiconductor f = 910 MHz Zload f = 850 MHz Zo = 5 Zsource f = 850 MHz f = 910 MHz VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. f MHz 850 865 880 895 910 Zsource W 3.61 - j2.30 2.85 - j2.54 2.13 - j2.47 1.53 - j2.27 1.02 - j1.90 Zload W 1.12 + j0.09 1.24 + j0.22 1.31 + j0.36 1.46 + j0.48 1.61 + j0.53 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Input Matching Network Device Under Test Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF5S9150HR3 MRF5S9150HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF5S9150HR3 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF5S9150HSR3 MRF5S9150HR3 MRF5S9150HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF5S9150HR3 MRF5S9150HSR3 Rev. 12 1, 5/2006 Document Number: MRF5S9150H RF Device Data Freescale Semiconductor |
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